Au(Si)-filled β-Ga2O3 nanotubes as wide range high temperature nanothermometers

被引：37

作者：

Gong, N. W. ^{[1
]}

Lu, M. Y. ^{[1
]}

Wang, C. Y. ^{[1
]}

Chen, Y. ^{[1
]}

Chen, L. J. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 07期

关键词：

CARBON NANOTUBES; GALLIUM;

D O I：

10.1063/1.2840574

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

Au(Si)-filled beta-Ga2O3 nanotubes were fabricated by an effective one-step chemical vapor deposition method. The Au(Si) interior was introduced by capillarity. Linear thermal expansion of Au(Si) with a coefficient of thermal expansion (CTE) as high as 1.5x10(-4)(1/K) within single crystal Ga2O3 shell up to 800(degrees) C was observed by in situ transmission electron microscopy. The high CTE is correlated to partial melting of Au(Si). As Ga2O3 possesses excellent thermal and chemical stability, the structure can be used as a wide range high-temperature nanothermometer within localized regions of nanosystems. (C) 2008 American Institute of Physics.

引用

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