Preparation and characterization of transparent conductive ZnO:Ga films by DC reactive magnetron sputtering

被引：47

作者：

Ma, Quan-Bao ^{[1
]}

Ye, Zhi-Zhen ^{[1
]}

He, Hai-Ping ^{[1
]}

Wang, Jing-Rui ^{[1
]}

Zhu, Li-Ping ^{[1
]}

Zhao, Bing-Hui ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

MATERIALS CHARACTERIZATION | 2008年 / 59卷 / 02期

基金：

中国国家自然科学基金;

关键词：

ZnO : Ga; transparent conductive oxide films; magnetron sputtering; electrical and optical properties;

D O I：

10.1016/j.matchar.2006.11.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallium-doped zinc oxide (ZnO:Ga) transparent conductive films were deposited on glass substrate by DC reactive magnetron sputtering. The influence of sputtering power on the structural, electrical, and optical properties of ZnO:Ga films was investigated by X-ray diffraction, scanning electron microscopy (SEM), Hall measurement, and optical transmission spectroscopy. The lowest resistivity of the ZnO:Ga film is 4.48 x 10(-4) Omega.cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (similar to 3.3 ev). (C) 2006 Elsevier Inc. All rights reserved.

引用

页码：124 / 128

页数：5

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