Gallium-doped ZnO thin films deposited by chemical spray

被引：100

作者：

Gomez, H

Maldonado, A

Olvera, MDLL

Acosta, DR

机构：

[1] Inst Politecn Nacl, CINVESTAV, SEES, Dept Ingn Elect, Mexico City 07000, DF, Mexico

[2] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 87卷 / 1-4期

关键词：

ZnO; annealing; spray pyrolysis; gallium; electrical;

D O I：

10.1016/j.solmat.2004.07.016

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Gallium-doped zinc oxide (ZnO:Ga) thin films were deposited on glass substrates by the spray pyrolysis technique. The effect of the variation of the [Ga]/[Zn] rate in the starting solution, the substrate temperature as well as the post-annealing treatments on the physical properties was examined. The electrical properties of the films show an improvement with the Ga incorporation and the annealing treatment. All the films were found to be polycrystalline and show a (0 0 2) preferential growth, irrespective of the deposition conditions. The films were of n-type conductivity with an electrical resistivity in the order of 8 X 10(-3) Omega cm and optical transmittance higher than 80% in the visible region. These results makes chemically sprayed ZnO:Ga potentially applicable as transparent electrode in photovoltaic devices. (c) 2004 Elsevier B.V. All rights reserved.

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页码：107 / 116

页数：10

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