High-quality ZnO films prepared on Si wafers by low-pressure MO-CVD

被引:100
作者
Haga, K
Suzuki, T
Kashiwaba, Y
Watanabe, H
Zhang, BP
Segawa, Y
机构
[1] Sendai Natl Coll Technol, Aoba Ku, Sendai, Miyagi 9893124, Japan
[2] RIKEN, Photodynam Res Ctr, Sendai, Miyagi 9800868, Japan
关键词
ZnO film; buffer layer; Si substrate; photoluminescence;
D O I
10.1016/S0040-6090(03)00327-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-quality ZnO films were successfully prepared on Si wafers by low-pressure MO-CVD using zinc acetylacetonate (Zn(C5H7O2)(2)) and oxygen. The c-axis oriented ZnO films were grown on p-type Si wafers at temperature of 520 degreesC with ZnO buffers layers deposited by RF sputtering. Although, the ZnO layer deposited by sputtering has a poor c-axis orientation, the films prepared by MO-CVD on the ZnO buffer layer shows a sharp X-ray diffraction peak at 34.4degrees corresponding to the (0002) of hexagonal ZnO. Room temperature photoluminescence spectrum of the all film exhibits a strong peak consisted of near-band edges emission at 378 nm. Current-voltage characteristics of the ZnO(n)/Si(p) heterojunction exhibits non-linear and rectifying characteristics with a small current leakage in the reverse direction. A dark-blue light was clearly observed around the periphery of the top Al electrode by applying forward bias voltages. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:131 / 134
页数:4
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