Investigations of perpendicular write head design for 1 Tb/in2

被引：36

作者：

Batra, S ^{[1
]}

Hannay, JD ^{[1
]}

Zhou, H ^{[1
]}

Goldberg, JS ^{[1
]}

机构：

[1] Seagate Technol, Pittsburgh, PA 15222 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2004年 / 40卷 / 01期

关键词：

bit-aspect ratio (BAR); effective write field; finite-element model (FEM); micromagnetic model; neighborhood induced transition shift (NITS); perpendicular recording; side shields; signal-to-noise ratio (SNR); soft underlayer (SUL); Tb/in(2); thermal erase width; transition jitter; transition shift; writability; write width;

D O I：

10.1109/TMAG.2003.821163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have revisited the considerations of perpendicular recording at 1 Tb/in(2). We have extensively modeled head designs with the down-track shield (DS) and head designs with the down-track and side shields (DS-SS). The side shields are needed to reduce the thermal erase width, however, there is a substantial reduction in effective write field for the DS-SS heads compared to the DS heads. This reduction in effective write field defines an upper limit for the anisotropy of the medium that can be written. As a consequence, it is hard to simultaneously achieve writability and the thermal stability requirement for 1 Tb/in(2).

引用

收藏

页码：319 / 325

页数：7

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