Measurements of the complex conductivity of NbxSi1-x alloys on the insulating side of the metal-insulator transition -: art. no. 116602

被引:19
作者
Helgren, E [1 ]
Grüner, G
Ciofalo, MR
Baxter, DV
Carini, JP
机构
[1] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA
[2] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA
关键词
D O I
10.1103/PhysRevLett.87.116602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have conducted temperature and frequency dependent transport measurements in amorphous NbxSi1-x samples in the insulating regime. We find a temperature dependent dc conductivity consistent with variable range hopping in a Coulomb glass. The frequency dependent response in the millimeter-wave frequency range can be described by the expression sigma(omega)proportional to(-t omega)(alpha) with the exponent somewhat smaller than 1. Our ac results are not consistent with extant theories for the hopping transport.
引用
收藏
页码:116602 / 1
页数:4
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