Measurements of the complex conductivity of NbxSi1-x alloys on the insulating side of the metal-insulator transition -: art. no. 116602

被引：19

作者：

Helgren, E ^{[1
]}

Grüner, G

Ciofalo, MR

Baxter, DV

Carini, JP

机构：

[1] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA

[2] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.87.116602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have conducted temperature and frequency dependent transport measurements in amorphous NbxSi1-x samples in the insulating regime. We find a temperature dependent dc conductivity consistent with variable range hopping in a Coulomb glass. The frequency dependent response in the millimeter-wave frequency range can be described by the expression sigma(omega)proportional to(-t omega)(alpha) with the exponent somewhat smaller than 1. Our ac results are not consistent with extant theories for the hopping transport.

引用

页码：116602 / 1

页数：4

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