Ferromagnetism in (In, Mn)As alloy thin films

被引：44

作者：

Blattner, AJ

Wessels, BW

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Engn & Mat Res Ctr, Evanston, IL 60208 USA

来源：

APPLIED SURFACE SCIENCE | 2004年 / 221卷 / 1-4期

关键词：

spintronics; diluted magnetic semiconductors; indium manganese arsenide; metalorganic vapor phase epitaxy;

D O I：

10.1016/S0169-4332(03)00873-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ferromagnetic properties of In1-xMnxAs thin films were investigated. Room temperature ferromagnetic order was observed in nominally single-phase films with x = 0.01-0.10. Magnetization measurements indicated that these In1-xMnxAs samples had a Curie temperature of 333 K. The Curie temperature was independent of Mn concentration. The temperature dependent magnetization along with the magnitude of the saturation magnetization and microstructural data indicate that the source of the high-temperature ferromagnetism in single-phase films is not attributable to MnAs nanoprecipitates. The high transition temperature is attributed to the presence of near neighbor Mn pairs. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：155 / 159

页数：5

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