Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor

In1-xMnxAs diluted magnetic semiconductor (DMS) thin films with x less than or equal to 0.14 have been grown using organometallic vapor phase epitaxy. Tricarbonyl(methyleyclopentadienyl)manganese was successfully used as the Mn source. Single phase, epitaxial films were achieved for compositions as high as x=0.14 using growth temperatures greater than or equal to 475 degreesC. For lower growth temperatures or x>0.14, nanometer scale MnAs precipitates were observed within the In1-xMnxAs matrix. Transport properties were investigated using the Hall effect. All Mn doped films were p-type with single phase films exhibiting hole concentrations less than or equal to 2 x 10(19) cm(-3). Magnetization was measured as a function of temperature and applied field for a single phase film with x=0.1. Ferromagnetic ordering was observed at 5 K with a saturation magnetization of M-s = 68 emu/cm(3), a remnant magnetization, M-r 10 emu/cm(3), and a coercive field H-c = 400 Oe.