High-Performance n-type Organic Semiconductors: Incorporating Specific Electron-Withdrawing Motifs to Achieve Tight Molecular Stacking and Optimized Energy Levels

被引：91

作者：

Yun, Sun Woo ^{[1
,2
]}

Kim, Jong H. ^{[1
,2
]}

Shin, Seunghoon ^{[1
,2
]}

Yang, Hoichang ^{[3
]}

An, Byeong-Kwan ^{[4
]}

Yang, Lin ^{[5
]}

Park, Soo Young ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Ctr Supramol Optoelect Mat, Seoul 151744, South Korea

[2] Seoul Natl Univ, WCU Hybrid Mat Program, Dept Mat Sci & Engn, Seoul 151744, South Korea

[3] Inha Univ, Dept Adv Fiber Engn, Inchon 402751, South Korea

[4] Catholic Univ Korea, Dept Chem, Bucheon Si 420753, Geyonggi Do, South Korea

[5] Brookhaven Natl Lab, Natl Synchrotron Light Source, Upton, NY 11973 USA

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

n-type organic semiconductor; molecular stacking; orgnic field-effect transistors; TRANSISTORS; CORE; OLIGOMERS; MOBILITY; DIIMIDE; SPECTRA; POLYMER;

D O I：

10.1002/adma.201103978

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Novel pi-conjugated cyanostilbene-based semiconductors (Hex-3,5-TFPTA and Hex-4-TFPTA) with tight molecular stacking and optimized energy levels are synthesized. Hex-4-TFPTA exhibits high-performance n-type organic fi eldeffect transistor (OFET) properties with electron mobilities as high as 2.14 cm(2) V(-1)s(-1) and on-off current ratios > 10(6).

引用

页码：911 / +

页数：6

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