An effective gate resistance model for CMOS RF and noise modeling

被引：110

作者：

Jin, XD ^{[1
]}

Ou, JJ ^{[1
]}

Chen, CH ^{[1
]}

Liu, WD ^{[1
]}

Deen, MJ ^{[1
]}

Gray, PR ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices. The accuracy of the model is validated with 2-D simulations and experimental data. In addition, the effect of the gate resistance on the device noise behavior has been studied with measured data. The result shows that an accurate gate resistance model is essential for the noise modeling.

引用

页码：961 / 964

页数：4

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