Scanning capacitance microscopy for two-dimensional doping profiling in Si- and InP-based device structures

被引：5

作者：

Bowallius, O

Ankarcrona, J

Hammar, M

Anand, S

Nilsson, S

Landgren, G

Radamson, H

Tilly, L

机构：

[1] Royal Inst Technol, Dept Elect, Lab Semicond Mat, S-16440 Kista, Sweden

[2] Royal Inst Technol, Semicond Lab, S-16440 Kista, Sweden

[3] Ericsson Components AB, S-16481 Kista, Sweden

来源：

PHYSICA SCRIPTA | 1999年 / T79卷

关键词：

D O I：

10.1238/Physica.Topical.079a00163

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the application of cross-sectional Scanning Capacitance Microscopy (SCM) for studying two-dimensional doping variations in Si and InP device structures. Different sample preparation methods were evaluated and the response of the SCM signal from various test structures, including epitaxially grown layers with n- and p-doping concentrations ranging from 5 x 10(14) to 2 x 10(19) cm(-3), were examined under different imaging conditions. The technique was further evaluated by imaging a Si bipolar transistor structure and an InP-based buried heterostructure diode laser. We conclude that valuable information can be gained also from complex device structures.

引用

页码：163 / 166

页数：4

共 8 条

[1] Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices [J].