Influence of slurry chemistry on frictional force in copper chemical mechanical polishing

被引：8

作者：

Ishikawa, A

Matsuo, H

Kikkawa, T

机构：

[1] Assoc Super Adv Elect Technol, MIRAI, Tsukuba, Ibaraki 3058569, Japan

[2] Natl Inst Adv Ind Sci & Technol, MIRAI, Adv Semicond Res Ctr, Tsukuba, Ibaraki 3058569, Japan

[3] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 7398527, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 09期

关键词：

D O I：

10.1149/1.1952607

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In situ frictional force measurement technique was developed for chemical mechanical polishing (CMP) process, and the influence of slurry chemistry of glycine/quinaldic acid/H2O2 on the frictional force was investigated. The results indicate that the CMP polishing rate increases nonlinearly with frictional force, and the coefficient of friction changes at the transitional friction force which is controlled by the concentration of the chelating agents. (c) 2005 The Electrochemical Society.

引用

页码：G695 / G697

页数：3

共 11 条

[1] Electrochemistry of copper in aqueous glycine solutions [J].

Aksu, S ;

Doyle, FM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (01) :B51-B57

[2] THE STABILITIES OF METAL CHELATE COMPOUNDS FORMED BY SOME HETEROCYCLIC ACIDS .1. STUDIES IN AQUEOUS SOLUTION [J].

HOLMES, F ;

CRIMMIN, WRC .

JOURNAL OF THE CHEMICAL SOCIETY, 1955, :1175-1180

[3] Effects of mechanical parameters on CMP characteristics analyzed by two-dimensional frictional-force measurement [J].

Homma, Y ;

Fukushima, K ;

Kondo, S ;

Sakuma, N .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (12) :G751-G757

[4] THE IONIZATION CONSTANTS OF GLYCINE AND THE EFFECT OF SODIUM CHLORIDE UPON ITS 2ND IONIZATION [J].

KING, EJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (01) :155-159

[5] Low-pressure CMP for reliable porous low-k/Cu integration [J].

Kondo, S ;

Tokitoh, S ;

Yoon, BU ;

Namiki, A ;

Sone, A ;

Ohashi, N ;

Misawa, K ;

Sone, S ;

Shin, HJ ;

Yoshie, T ;

Yoneda, K ;

Shimada, M ;

Ogawa, S ;

Matsumoto, I ;

Kobayashi, N .

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2003, :86-88

[6] Low-k dielectrics characterization for Damascene integration [J].

Lin, S ;

Jin, CM ;

Lui, L ;

Tsai, MS ;

Daniels, M ;

Gonzalez, A ;

Wetzel, JT ;

Monnig, KA ;

Winebarger, PA ;

Jang, S ;

Yu, D ;

Liang, MS .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :146-148

[7] Role of frictional force on the polishing rate of Cu chemical mechanical polishing [J].

Matsuo, H ;

Ishikawa, A ;

Kikkawa, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B) :1813-1819

[8]

MOON Y, 1998, ADV MET C 1998 AMC 1, P255

[9] Fundamental tribological and removal rate, studies of inter-layer dielectric chemical mechanical planarization [J].

Philipossian, A ;

Olsen, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (10) :6371-6379

[10] INHIBITION AND ACCELERATION OF ALUMINUM CORROSION [J].

SAMUELS, BW ;

SOTOUDEH, K ;

FOLEY, RT .

CORROSION, 1981, 37 (02) :92-97

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