Deposition of SiO2 films with high laser damage thresholds by ion-assisted electron-beam evaporation

被引：29

作者：

Alvisi, M ^{[1
]}

De Nunzio, G

Di Giulio, M

Ferrara, MC

Perrone, MR

Protopapa, L

Vasanelli, L

机构：

[1] Univ Lecce, Ist Nazl Fis Mat, I-73100 Lecce, Italy

[2] Ctr Nazl Ric & Suiluppo Mat, I-72100 Brindisi, Italy

来源：

APPLIED OPTICS | 1999年 / 38卷 / 07期

关键词：

D O I：

10.1364/AO.38.001237

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

SiO2, thin films (approximate to 100 nm thick) with transmittivity and a laser damage threshold nearly equal to those of bulk material are deposited on silica substrates by the technique of ion-assisted electron-beam evaporation. The influence of film packing density on the laser damage threshold is investigated by the technique of photoacoustic probe beam deflection. It is shown that films with lower packing density may have a higher laser damage threshold and as a consequence better heat dissipation. (C) 1999 Optical Society of America. OCIS codes: 140.3330, 310.1860, 310.6860.

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页码：1237 / 1243

页数：7

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