Tailoring hole spin splitting and polarization in nanowires

被引：12

作者：

Csontos, D. ^{[1
]}

Zuelicke, U. ^{[1
,2
,3
,4
]}

机构：

[1] Massey Univ, Inst Fundamental Sci, Palmerston North, New Zealand

[2] Massey Univ, MacDiarmid Inst Adv Mat & Nanotechnol, Palmerston North, New Zealand

[3] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76128 Karlsruhe, Germany

[4] Univ Karlsruhe, DFG Ctr Funct Nanostruct, D-76128 Karlsruhe, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

关键词：

D O I：

10.1063/1.2834702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin splitting in p-type semiconductor nanowires is strongly affected by the interplay between quantum confinement and spin-orbit coupling in the valence band. The latter's particular importance is revealed in our systematic theoretical study presented here, which has mapped the range of spin-orbit coupling strengths realized in typical semiconductors. Large controllable variations of the g factor with associated characteristic spin polarization are shown to exist for nanowire subband edges, which therefore turn out to be a versatile laboratory for investigating the complex spin properties exhibited by quantum-confined holes. (c) 2008 American Institute of Physics.

引用

页数：3

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