ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

被引：71

作者：

Janik, E.

Sadowski, J.

Dluzewski, P.

Kret, S.

Baczewski, L. T.

Petroutchik, A.

Lusakowska, E.

Wrobel, J.

Zaleszczyk, W.

Karczewski, G.

Wojtowicz, T.

Presz, A.

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 13期

关键词：

D O I：

10.1063/1.2357334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 mu m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 angstrom thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 degrees to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is < 111 >. (c) 2006 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 25 条

[1] Nanowire resonant tunneling diodes [J].

Björk, MT ;

Ohlsson, BJ ;

Thelander, C ;

Persson, AI ;

Deppert, K ;

Wallenberg, LR ;

Samuelson, L .

APPLIED PHYSICS LETTERS, 2002, 81 (23) :4458-4460

[2] One-dimensional steeplechase for electrons realized [J].

Björk, MT ;

Ohlsson, BJ ;

Sass, T ;

Persson, AI ;

Thelander, C ;

Magnusson, MH ;

Deppert, K ;

Wallenberg, LR ;

Samuelson, L .

NANO LETTERS, 2002, 2 (02) :87-89

[3] Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy [J].

Colli, A ;

Hofmann, S ;

Ferrari, AC ;

Martelli, F ;

Rubini, S ;

Ducati, C ;

Franciosi, A ;

Robertson, J .

NANOTECHNOLOGY, 2005, 16 (05) :S139-S142

[4] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].

Duan, XF ;

Huang, Y ;

Cui, Y ;

Wang, JF ;

Lieber, CM .

NATURE, 2001, 409 (6816) :66-69

[5] Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy [J].

Dubrovskii, VG ;

Sibirev, NV ;

Cirlin, GE ;

Harmand, JC ;

Ustinov, VM .

PHYSICAL REVIEW E, 2006, 73 (02)

[6] Carrier-induced ferromagnetism in p-Zn1-xMnxTe -: art. no. 085201 [J].

Ferrand, D ;

Cibert, J ;

Wasiela, A ;

Bourgognon, C ;

Tatarenko, S ;

Fishman, G ;

Andrearczyk, T ;

Jaroszynski, J ;

Kolesnik, S ;

Dietl, T ;

Barbara, B ;

Dufeu, D .

PHYSICAL REVIEW B, 2001, 63 (08)

[7] The influence of the surface migration of gold on the growth of silicon nanowires [J].

Hannon, JB ;

Kodambaka, S ;

Ross, FM ;

Tromp, RM .

NATURE, 2006, 440 (7080) :69-71

[8] Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth -: art. no. 203101 [J].

Harmand, JC ;

Patriarche, G ;

Péré-Laperne, N ;

Mérat-Combes, MN ;

Travers, L ;

Glas, F .

APPLIED PHYSICS LETTERS, 2005, 87 (20) :1-3

[9] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[10] Role of surface diffusion in chemical beam epitaxy of InAs nanowires [J].

Jensen, LE ;

Björk, MT ;

Jeppesen, S ;

Persson, AI ;

Ohlsson, BJ ;

Samuelson, L .

NANO LETTERS, 2004, 4 (10) :1961-1964