Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy

被引：36

作者：

Colli, A ^{[1
]}

Hofmann, S

Ferrari, AC

Martelli, F

Rubini, S

Ducati, C

Franciosi, A

Robertson, J

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[4] Univ Trieste, Dipartimento Fis, I-34127 Trieste, Italy

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 05期

关键词：

D O I：

10.1088/0957-4484/16/5/001

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Controlled growth of ZnSe and ZnCdSe nanowires is demonstrated by molecular beam epitaxy using Au or Ag catalyst films in the temperature range 400-550 degrees C. The highest density of small-diameter (10 nm), highly-crystalline ZnSe nanowires is achieved by using Au at 400 degrees C. Direct growth onto transmission electron microscope grids clearly indicates a tip-growth regime. Pre-patterning of the catalyst film allows highly selective ZnSe deposition as probed by photoluminescence and Raman spectroscopy. In similar conditions, the addition of Cd vapour in the MBE reactor allows the synthesis of ZnCdSe ternary nanowires.

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收藏

页码：S139 / S142

页数：4

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