Ultrathin epitaxial germanium on crystalline oxide metal-oxide-semiconductor-field-effect transistors

被引：21

作者：

Preisler, EJ

Guha, S ^{[1
]}

Perkins, BR

Kazazis, D

Zaslavsky, A

机构：

[1] IBM Corp, TJ Watson Res Lab, Yorktown Hts, NY 10598 USA

[2] Brown Univ, Div Engn, Providence, RI 02912 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 22期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1941451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrathin films of single crystal Ge (100 A or less) have been grown epitaxially on a lattice matched high-kappa crystalline oxide, lanthanum-yttrium-oxide, in turn grown on Si. Back-gated germanium-on-insulator field-effect transistors have been fabricated and measured from these germanium-on-insulator layers for Ge layers in the 30-600 A range. The best devices exhibit an I-on/I-off ratio over 10(3) at room temperature and 10(5) at T=77 K. These ultrathin devices can be fully depleted and inverted, enabling both p and n channel operation in the same device. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

相关论文

共 11 条

[1] Epitaxial silicon and germanium on buried insulator heterostructures and devices [J].

Bojarczuk, NA ;

Copel, M ;

Guha, S ;

Narayanan, V ;

Preisler, EJ ;

Ross, FM ;

Shang, H .

APPLIED PHYSICS LETTERS, 2003, 83 (26) :5443-5445

[2] A review of the pseudo-MOS transistor in SOI wafers: Operation, parameter extraction, and applications [J].

Cristoloveanu, S ;

Munteanu, D ;

Liu, MST .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (05) :1018-1027

[3] Requirements for ultra-thin-film devices and new materials for the CMOS roadmap [J].

Fenouillet-Beranger, C ;

Skotnicki, T ;

Monfray, S ;

Carriere, N ;

Boeuf, F .

SOLID-STATE ELECTRONICS, 2004, 48 (06) :961-967

[4] Lattice-matched, epitaxial, silicon-insulating lanthanum yttrium oxide heterostructures [J].

Guha, S ;

Bojarczuk, NA ;

Narayanan, V .

APPLIED PHYSICS LETTERS, 2002, 80 (05) :766-768

[5]

HUANG CH, 2003, IEEE S VLSI TECHN, P119

[6] High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates [J].

Liu, YC ;

Deal, MD ;

Plummer, JD .

APPLIED PHYSICS LETTERS, 2004, 84 (14) :2563-2565

[7] Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique [J].

Nakaharai, S ;

Tezuka, T ;

Sugiyama, N ;

Moriyama, Y ;

Takagi, S .

APPLIED PHYSICS LETTERS, 2003, 83 (17) :3516-3518

[8]

OH CB, 2003, IEDM

[9] Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate [J].

Shang, HL ;

Lee, KL ;

Kozlowski, P ;

D'Emic, C ;

Babich, I ;

Sikorski, E ;

Ieong, MK ;

Wong, HSP ;

Guarini, K ;

Haensch, N .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (03) :135-137

[10]

ATLAS 5 7 45 C