SiC device edge termination using finite area argon implantation

被引：51

作者：

Alok, D ^{[1
]}

Baliga, BJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,POWER SEMICOND RES CTR,RALEIGH,NC 27695

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 06期

关键词：

D O I：

10.1109/16.585559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the results obtained with limited area amorphization by argon ion-implantation at the periphery of 6H-SiC Schottky barrier diodes are reported, It is demonstrated that only 50 mu m of implant region is required at the periphery to obtain ideal plane parallel breakdown voltages, The leakage current at small reverse bias voltages was found to be directly proportional to the implant area.

引用

页码：1013 / 1017

页数：5

共 10 条

[1]

ALOK D, 1995, ISPSD '95 - PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P96, DOI 10.1109/ISPSD.1995.515016

[2]

ALOK D, 1995, ICSCRM 95

[3]

Baliga B. J., 1995, Power semiconductor devices (general engineering)

[4] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].

BHATNAGAR, M ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655

[5]

BHATNAGAR M, 1993, P 5 ISPSD, V5, P89

[6]

EDMOND JA, 1 INT HIGH TEMP EL C, P207

[7] Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination [J].

Itoh, A ;

Kimoto, T ;

Matsunami, H .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) :139-141

[8] HIGH-VOLTAGE 6H-SIC P-N-JUNCTION DIODES [J].

MATUS, LG ;

POWELL, JA ;

SALUPO, CS .

APPLIED PHYSICS LETTERS, 1991, 59 (14) :1770-1772

[9] METHODS OF AVOIDING EDGE EFFECTS ON SEMICONDUCTOR DIODES [J].

TOVE, PA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (04) :517-536

[10] THE POTENTIAL OF DIAMOND AND SIC ELECTRONIC DEVICES FOR MICROWAVE AND MILLIMETER-WAVE POWER APPLICATIONS [J].

TREW, RJ ;

YAN, JB ;

MOCK, PM .

PROCEEDINGS OF THE IEEE, 1991, 79 (05) :598-620

← 1 →