METHODS OF AVOIDING EDGE EFFECTS ON SEMICONDUCTOR DIODES

被引：20

作者：

TOVE, PA

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1982年 / 15卷 / 04期

关键词：

D O I：

10.1088/0022-3727/15/4/005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：517 / 536

页数：20

共 41 条

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