Wide-temperature-range operation of 1.3-mu m beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask

被引：21

作者：

Aoki, M

Komori, M

Suzuki, M

Sato, H

Takahashi, M

Ohtoshi, T

Uomi, K

Tsuji, S

机构：

[1] Central Research Labs., Hitachi Ltd., Kokubunji

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 04期

关键词：

D O I：

10.1109/68.491089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new fabrication method of high-quality thickness-tapered semiconductor waveguides is proposed based on controlling in-plane thickness during MOVPE by using a comb-shaped silicon shadow mask, It was used to fabricate a 1.3-mu m-wavelength narrow-beam (less than 13 degrees) InGaAsP-InP laser diode, which achieved high-power (over 20 mW) operation up to 85 degrees.

引用

收藏

页码：479 / 481

页数：3

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