INVESTIGATION OF EFFECT OF STRAIN ON LOW-THRESHOLD 1.3 MU-M INGAASP STRAINED-LAYER QUANTUM-WELL LASERS

被引：17

作者：

TSUCHIYA, T ^{[1
]}

KOMORI, M ^{[1
]}

UOMI, K ^{[1
]}

OKA, A ^{[1
]}

KAWANO, T ^{[1
]}

OISHI, A ^{[1
]}

机构：

[1] HITACHI LTD,CTR OPT DEVICE DEV,DIV FIBEROPT,KOKUBUNJI,TOKYO 185,JAPAN

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 10期

关键词：

SEMICONDUCTOR LASERS; PHOTOLUMINESCENCE;

D O I：

10.1049/el:19940560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have investigated the effect of strain on 1.3mum InGaAsP lasers under the same well thickness (6nm) and same lasing wavelength (1.34mum) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23meV), and minimum threshold current density (450A/cm2) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3mA) was also achieved in a 90-70% coated 200mum-long device.

引用

页码：788 / 789

页数：2

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