LOW-THRESHOLD (3.2 MA PER ELEMENT) 13 MU-M INGAASP MQW LASER ARRAY ON A P-TYPE SUBSTRATE

被引：16

作者：

YAMASHITA, S

OKA, A

KAWANO, T

TSUCHIYA, T

SAITOH, K

UOMI, K

ONO, Y

机构：

[1] Central Research Laboratory, Hitachi Ltd., Tokyo

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 09期

关键词：

D O I：

10.1109/68.157113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low threshold 1.3-mu-m InGaAsP MQW laser array has been fabricated on a p-type InP substrate considering compatibility with n / p / n type laser-driver circuits. The laser has a p / n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2 +/- 0.2 mA (per element) and a slope efficiency of 0.27 +/- 0.01 W / A is obtained.

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收藏

页码：954 / 957

页数：4

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