LOW-THRESHOLD AND HIGH-TEMPERATURE OPERATION OF 1.55-MU-M SELF-ALIGNED RIDGE-WAVE-GUIDE MULTIPLE-QUANTUM-WELL LASERS GROWN BY CHEMICAL-BEAM EPITAXY

We describe a low-threshold, low-internal-loss, multiple-quantum-well ridge waveguide laser operating at 1.55-mu-m wavelength and grown by chemical-beam epitaxy. With a high-reflection coating applied to one facet, it can operate CW to 100-degrees-C. The laser exhibits single transverse-mode output and 6-GHz bandwidth. Processing utilizes a combination of self-aligned reactive-ion etching and wet chemical etching. Nearly 100% threshold and quantum efficiency yield of devices in bar form was obtained as a result of the excellent material uniformity, precision process control, and process uniformity over the wafer. This suggests that the present laser may be a potential candidate for low-cost light source applications.