Electron-beam-induced strain within InGaN quantum wells: False indium "cluster" detection in the transmission electron microscope

被引：229

作者：

Smeeton, TM ^{[1
]}

Kappers, MJ ^{[1
]}

Barnard, JS ^{[1
]}

Vickers, ME ^{[1
]}

Humphreys, CJ ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 26期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1636534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution TEM images acquired immediately after first irradiating a region of quantum well indicates no gross fluctuations of indium content in the InGaN alloy. During only a brief period of irradiation, inhomogeneous strain is introduced in the material due to electron beam damage. This strain is very similar to that expected from genuine nanometer-scale indium composition fluctuations which suggests there is the possibility of falsely detecting indium-rich "clusters" in a homogeneous quantum well. (C) 2003 American Institute of Physics.

引用

页码：5419 / 5421

页数：3

共 13 条

[11] Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy [J].

Smeeton, TM ;

Kappers, MJ ;

Barnard, JS ;

Vickers, ME ;

Humphreys, CJ .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 240 (02) :297-300

[12] First-principles calculations of the thermodynamic and structural properties of strained InxGa1-xN and AlxGa1-xN alloys [J].

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Bechstedt, F .

PHYSICAL REVIEW B, 2000, 62 (04) :2475-2485

[13] Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering [J].

Vickers, ME ;

Kappers, MJ ;

Smeeton, TM ;

Thrush, EJ ;

Barnard, JS ;

Humphreys, CJ .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) :1565-1574

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