The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs

被引：106

作者：

Barquinha, P. ^{[1
]}

Pereira, L.

Goncalves, G.

Martins, R.

Fortunato, E.

机构：

[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT,I3N, P-2829516 Caparica, Portugal

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 09期

关键词：

D O I：

10.1149/1.2945869

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The influence of oxygen content, radio-frequency (rf) sputtering power, and postdeposition annealing on the electrical properties of gallium-indium-zinc oxide (GIZO) thin-film transistors (TFTs) is analyzed. Little to no oxygen content in the sputtering chamber is crucial to obtain high-performance devices, even before annealing. In contrast, a high oxygen content and rf power lead, respectively, to unstable/poor performing and depletion mode TFTs before annealing, and mainly for these "nonideal" conditions, annealing proves to be effective to improve device performance/stability and to decrease the performance discrepancy among TFTs processed under different oxygen and rf power conditions. Best TFTs present a field-effect mobility of 46 cm(2)/V s, subthreshold swing of 0.26 V/dec, threshold voltage of 0.70 V, and an on/off ratio 10(8)-10(9). These results are a consequence of the optimized processing and of the usage of proper GIZO target composition, 1:2:1 mol. (C) 2008 The Electrochemical Society.

引用

页码：H248 / H251

页数：4

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