Evolution of hydrogen platelets in silicon determined by polarized Raman spectroscopy

被引:39
作者
Lavrov, EV [1 ]
Weber, J
机构
[1] Dresden Univ Technol, D-01062 Dresden, Germany
[2] Russian Acad Sci, Inst Radioengn & Elect, Moscow 103907, Russia
关键词
D O I
10.1103/PhysRevLett.87.185502
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Crystalline silicon treated in a remote hydrogen plasma exhibits {111} platelike defects. From polarized Raman spectroscopy, we identify two different hydrogen-related extended {111} defects, which exist simultaneously in the samples: an optically dense structure with epsilon congruent to 14 and a structure with epsilon congruent to 1 which, contains the H-2 molecules. The platelet with e congruent to 14 is assigned to agglomerated H-2* defects in a, (111) plane. At 100 degreesC, it transforms into the platelet with e congruent to 1, which is assigned to hydrogenated silicon (111) surfaces.
引用
收藏
页码:185502 / 1
页数:4
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