Photoluminescence characterisation of hydrogen-related centres in silicon

被引：19

作者：

Safonov, AN ^{[1
]}

Lightowlers, EC ^{[1
]}

机构：

[1] Univ London Kings Coll, Dept Phys, London WC2R 2LS, England

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 58卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

silicon; hydrogen; photoluminescence;

D O I：

10.1016/S0921-5107(98)00272-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of photoluminescence studies on hydrogen-related centres created in thermal treated silicon are reported. An account is given of the optical, electronic and structural characteristics of the defects obtained from uniaxial stress, magnetic field and temperature-dependence measurements and from isotope substitution. It is shown that most of the centres create an acceptor state ( - /0) in the upper half of the band gap and that their excited electronic states can be accounted for within the effective mass approximation. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：39 / 47

页数：9

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