Positronium in low temperature mesoporous films

被引:32
作者
Fischer, CG [1 ]
Weber, MH [1 ]
Wang, CL [1 ]
McNeil, SP [1 ]
Lynn, KG [1 ]
机构
[1] Washington State Univ, Dept Phys, Pullman, WA 99164 USA
关键词
D O I
10.1103/PhysRevB.71.180102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the formation and annihilation of ortho-positronium atoms (o-Ps), the spins parallel electron (e(-))-positron (e(+)) bound state, in mesoporous films from 400 to 50 K. At room temperature up to 20% of the implanted e(+) end up as o-Ps which self-annihilates (the bound e(+) and e(-) annihilate); this is 50% of the formed o-Ps. One would expect self-annihilation to be suppressed at lower temperatures since, although o-Ps trapped in pores of diameter phi > 1 nm, found in these films, is more likely to self-annihilate, several effects could decrease o-Ps formation and/or o-Ps trapping in a pore. Instead we find that at 50 K the amount of e(+) ending up as self-annihilating o-Ps is up to 19% greater than predicted if no suppressing effects played a role. Copious amounts of o-Ps atoms self-annihilate at 50 K (up to 30% of implanted e(+), 75% of formed o-Ps). This amount was found to increase even further down to 10 K making these films ideal substrates in which to confine large amounts of collisionally cooled, self-annihilating o-Ps for the eventual realization of an o-Ps Bose Einstein condensate (BEC).
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相关论文
共 24 条
[1]   POSITRON REFLECTION FROM THE SURFACE-POTENTIAL [J].
BRITTON, DT ;
HUTTUNEN, PA ;
MAKINEN, J ;
SOININEN, E ;
VEHANEN, A .
PHYSICAL REVIEW LETTERS, 1989, 62 (20) :2413-2416
[2]   Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy [J].
Brusa, RS ;
Spagolla, M ;
Karwasz, GP ;
Zecca, A ;
Ottaviani, G ;
Corni, F ;
Bacchetta, M ;
Carollo, E .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (05) :2348-2354
[3]   Interface and surface effects on the glass transition in thin polystyrene films [J].
DeMaggio, GB ;
Frieze, WE ;
Gidley, DW ;
Zhu, M ;
Hristov, HA ;
Yee, AF .
PHYSICAL REVIEW LETTERS, 1997, 78 (08) :1524-1527
[4]   Determination of pore-size distribution in low-dielectric thin films [J].
Gidley, DW ;
Frieze, WE ;
Dull, TL ;
Sun, J ;
Yee, AF ;
Nguyen, CV ;
Yoon, DY .
APPLIED PHYSICS LETTERS, 2000, 76 (10) :1282-1284
[5]   Positronium annihilation in mesoporous thin films [J].
Gidley, DW ;
Frieze, WE ;
Dull, TL ;
Yee, AF ;
Ryan, ET ;
Ho, HM .
PHYSICAL REVIEW B, 1999, 60 (08) :R5157-R5160
[6]  
GOWOREK T, 1997, CHEM PHYS LETT, V91, P272
[7]   POSITRON-ANNIHILATION STUDY OF VOIDS IN A-SI AND A-SI-H [J].
HE, YJ ;
HASEGAWA, M ;
LEE, R ;
BERKO, S ;
ADLER, D ;
JUNG, AL .
PHYSICAL REVIEW B, 1986, 33 (08) :5924-5927
[8]   Extension of the equation for the annihilation lifetime of ortho-positronium at a cavity larger than 1 nm in radius [J].
Ito, K ;
Nakanishi, H ;
Ujihira, Y .
JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (21) :4555-4558
[9]   Porosity effect on the dielectric constant and thermomechanical properties of organosilicate films [J].
Liu, JJ ;
Gan, DW ;
Hu, C ;
Kiene, M ;
Ho, PS ;
Volksen, W ;
Miller, RD .
APPLIED PHYSICS LETTERS, 2002, 81 (22) :4180-4182
[10]   Porous organosilicates for on-chip dielectric applications [J].
Miller, RD ;
Beyers, R ;
Carter, KR ;
Cook, RF ;
Harbison, M ;
Hawker, CJ ;
Hedrick, JL ;
Lee, V ;
Liniger, E ;
Nguyen, C ;
Remenar, J ;
Sherwood, M ;
Trollsås, M ;
Volksen, W ;
Yoon, DY .
LOW-DIELECTRIC CONSTANT MATERIALS V, 1999, 565 :3-15