Direct three-dimensional patterning using nanoimprint lithography

被引:99
作者
Li, MT [1 ]
Chen, L [1 ]
Chou, SY [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Nanostruct Lab, Princeton, NJ 08544 USA
关键词
D O I
10.1063/1.1375006
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrated that nanoimprint lithography (NIL) can create three-dimensional patterns, sub-40 nm T-gates, and air-bridge structures, in a single step imprint in polymer and metal by lift-off. A method based on electron beam lithography and reactive ion etching was developed to fabricate NIL molds with three-dimensional protrusions. The low-cost and high-throughput nanoimprint lithography for three-dimensional nanostructures has many significant applications such as monolithic microwave integrated circuits and nanoelectromechanical system. (C) 2001 American Institute of Physics.
引用
收藏
页码:3322 / 3324
页数:3
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