Electronic structure and origin of ferromagnetism in Ga1-xMnxAs semiconductors

被引：9

作者：

da Silva, AJR

Fazzio, A

dos Santos, RR

Oliveira, LE

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

[2] Univ Fed Rio de Janeiro, Inst Fis, BR-21945970 Rio De Janeiro, Brazil

[3] Univ Estadual Campinas, Inst Fis, BR-13083970 Campinas, SP, Brazil

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 340卷

关键词：

diluted magnetic semiconductors; (Ga; Mn)As; first-principles calculations;

D O I：

10.1016/j.physb.2003.09.210

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We perform a detailed theoretical study, within the density-functional theory, of the electronic structure and magnetic properties of Ga1-xMnxAs diluted semiconductors. Ab initio total energy results provide evidence that the appearance of a ferromagnetic state in these materials is due to an exchange coupling between the localized up arrow S =5/2 Mn spins mediated by quasi-localized down arrow holes, with strong p-like character, surrounding the fully polarized Mn d(5)-electrons. From total energy differences, we find the effective Mn-Mn coupling always ferromagnetic, with the Mn-Mn interaction intermediated by an anti ferromagnetic coupling of each Mn spin to the holes. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：874 / 877

页数：4

共 24 条

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