Epitaxial growth of RuO2 thin films by metal-organic chemical vapor deposition

被引：17

作者：

Lu, P ^{[1
]}

He, S

Li, FX

Jia, QX

机构：

[1] New Mexico Inst Min & Technol, Dept Mat Sci & Engn, Socorro, NM 87801 USA

[2] Univ Calif Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

THIN SOLID FILMS | 1999年 / 340卷 / 1-2期

关键词：

metal-organic chemical vapor deposition; ruthenium oxide; epitaxial growth; thin film; deposition process;

D O I：

10.1016/S0040-6090(98)01396-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conductive RuO2 thin films were epitaxially grown on LaAlO3(100) and MgO(100) substrates by metal-organic chemical vapor deposition (MOCVD). The deposited RuO2 films were crack-free, and well adhered to the substrates. The RuO2 film is (200) oriented on LaAlO3(100) substrates at deposition temperature of 600 degrees C and (110) oriented on MgO(100) substrates at deposition temperature or 350 degrees C and above. The epitaxial growth of RuO2 on MgO and LaAlO3 is demonstrated by strong in-plane orientation of thin films with respect to the major axes of the substrates. The RuO2 films on MgO(100) contain two variants and form an orientation relationship with MgO given by RuO2(110)//McO(100) and RuO2[001]//MgO[011]. The RuO2 films on LaAlO3(100), on the other hand, contain four variants and form an orientation relationship with LaAlO3 given by RuO2(200)//LaAlO3(100) and RuO2[011]//LaAlO3[011]. Electrical measurements on the RuO2 thin films deposited at 600 degrees C show room-temperature resistivities of similar to 40 and similar to 50 mu Ohm cm for the films deposited on the MgO and LaAlO3 substrates, respectively. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：140 / 144

页数：5