MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

被引：5

作者：

Chang, SJ ^{[1
]}

Su, YK ^{[1
]}

Lin, YC ^{[1
]}

Chuang, RW ^{[1
]}

Chang, CS ^{[1
]}

Sheu, JK ^{[1
]}

Wen, TC ^{[1
]}

Shei, SC ^{[1
]}

Kuo, CW ^{[1
]}

Fang, DH ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303355

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2253 / 2256

页数：4

共 7 条

[1] InGaN-GaN multiquantum-well blue and green light-emitting diodes [J].

Chang, SJ ;

Lai, WC ;

Su, YK ;

Chen, JF ;

Liu, CH ;

Liaw, UH .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :278-283

[2] P-down InGaN/GaN multiple quantum wells light-emitting diode structure grown by metal-organic vapor-phase epitaxy [J].

Ko, CH ;

Su, YK ;

Chang, SJ ;

Kuan, TM ;

Chiang, CI ;

Lan, WH ;

Lin, WJ ;

Webb, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B) :2489-2492

[3] InGaN/GaN light emitting diodes activated in O2 ambient [J].

Kuo, CH ;

Chang, SJ ;

Su, YK ;

Chen, JF ;

Wu, LW ;

Sheu, JK ;

Chen, CH ;

Chi, GC .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (05) :240-242

[4]

Tadatomo K, 2001, PHYS STATUS SOLIDI A, V188, P121, DOI 10.1002/1521-396X(200111)188:1<121::AID-PSSA121>3.0.CO

[5]

2-G

[6] InGaN/GaN tunnel-injection blue light-emitting diodes [J].

Wen, TC ;

Chang, SJ ;

Wu, LW ;

Su, YK ;

Lai, WC ;

Kuo, CH ;

Chen, CH ;

Sheu, JK ;

Chen, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (06) :1093-1095

[7] Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes [J].

Wu, LW ;

Chang, SJ ;

Wen, TC ;

Su, YK ;

Chen, JF ;

Lai, WC ;

Kuo, CH ;

Chen, CH ;

Sheu, JK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (05) :446-450

← 1 →