Free-standing porous silicon single and multiple optical cavities

被引:123
作者
Ghulinyan, M
Oton, CJ
Bonetti, G
Gaburro, Z
Pavesi, L
机构
[1] Univ Trent, INFM, I-38050 Trent, Italy
[2] Univ Trent, Dipartimento Fis, I-38050 Trent, Italy
关键词
D O I
10.1063/1.1578170
中图分类号
O59 [应用物理学];
学科分类号
摘要
Porous silicon free-standing microcavity structures, with different layer designs, have been fabricated. Single microcavities show transmission resonances in the technologically relevant wavelength region of 1.55 mum with quality factors up to 3380. High-order cavities show sub-nm transmission peaks over the whole stop band. Coupled microcavity structures, where splitting of the degenerate cavity mode occurs, lead to multiple transmission peaks in a limited region of the stop band. We also report incident angle-dependent measurements, where transmission peak blueshift and splitting of transverse electric and transverse magnetic polarized modes due to porous silicon birefringence were observed. (C) 2003 American Institute of Physics.
引用
收藏
页码:9724 / 9729
页数:6
相关论文
共 24 条
[1]   Fractal model of a porous semiconductor [J].
Aroutiounian, VM ;
Ghulinyan, MZ ;
Tributsch, H .
APPLIED SURFACE SCIENCE, 2000, 162 :122-132
[2]   Influence of etch stops on the microstructure of porous silicon layers [J].
Billat, S ;
Thonissen, M ;
ArensFischer, R ;
Berger, MG ;
Kruger, M ;
Luth, H .
THIN SOLID FILMS, 1997, 297 (1-2) :22-25
[3]   Porous silicon: a quantum sponge structure for silicon based optoelectronics [J].
Bisi, O ;
Ossicini, S ;
Pavesi, L .
SURFACE SCIENCE REPORTS, 2000, 38 (1-3) :1-126
[4]  
Born M., 1986, PRINCIPLES OPTICS
[5]   Tunable, narrow, and directional luminescence from porous silicon light emitting devices [J].
Chan, S ;
Fauchet, PM .
APPLIED PHYSICS LETTERS, 1999, 75 (02) :274-276
[6]   Silicon microcavity light emitting devices [J].
Chan, S ;
Fauchet, PM .
OPTICAL MATERIALS, 2001, 17 (1-2) :31-34
[7]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[8]   OPTICAL CHARACTERIZATION OF POROUS SILICON LAYERS BY SPECTROMETRIC ELLIPSOMETRY IN THE 1.5-5 EV RANGE [J].
FERRIEU, F ;
HALIMAOUI, A ;
BENSAHEL, D .
SOLID STATE COMMUNICATIONS, 1992, 84 (03) :293-296
[9]   POROUS SILICON SUPERLATTICES [J].
FROHNHOFF, S ;
BERGER, MG .
ADVANCED MATERIALS, 1994, 6 (12) :963-965
[10]   Monitoring penetration of ethanol in a porous silicon microcavity by photoluminescence interferometry [J].
Gaburro, Z ;
Daldosso, N ;
Pavesi, L ;
Faglia, G ;
Baratto, C ;
Sberveglieri, G .
APPLIED PHYSICS LETTERS, 2001, 78 (23) :3744-3746