OPTICAL CHARACTERIZATION OF POROUS SILICON LAYERS BY SPECTROMETRIC ELLIPSOMETRY IN THE 1.5-5 EV RANGE

被引:60
作者
FERRIEU, F
HALIMAOUI, A
BENSAHEL, D
机构
[1] France Télécom, CNET-CNS, 38243 Meylan Cedex
关键词
D O I
10.1016/0038-1098(92)90124-R
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Spectroscopic ellipsometry study in the 1.5-5 eV range have been performed in 3 mum thick porous silicon layers, made on p and p+ substrates and with porosities varying from 10% up to 86%. Above 2.5 eV, spectroscopic data are shown to depend on material morphology. Below 2.5 eV and for very high porosities, the PS films reveal an uniaxial optical anisotropy. A quantitative determination of this anisotropy, i.e., the bifregingence, in both p and p+ porous films can be achieved.
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页码:293 / 296
页数:4
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