Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode

被引：19

作者：

Pan, J ^{[1
]}

Woo, C

Yang, CY

Bhandary, U

Guggilla, S

Krishna, N

Chung, H

Hui, A

Yu, B

Xiang, Q

Lin, MR

机构：

[1] Adv Micro Devices Inc, Sunnyvale, CA 94088 USA

[2] Appl Mat Inc, Santa Clara, CA 95054 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 05期

关键词：

ALD; Cu; damascene; metal gate; NMOSFETs; replacement; tantalum;

D O I：

10.1109/LED.2003.812574

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports the first replacement (Damascene) metal gate NMOSFETs with atomic layer deposition (ALD) TaN/PVD and electroplated Cu as the stacked gate electrode. Transistors with PVD TaN and PVD Ta electrode are also fabricated. Our data show that ALD TaN has the right work function for the N-MOSFETs. The Cu damascene process can reduce the gate resistivity.. The ALD process has the advantage of reducing the stress and radiation damages to the gate oxide. The damascene process flow bypasses high temperature steps (>600 degreesC)-critical for metal gate and hi k materials.

引用

页码：304 / 305

页数：2

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