Highly transparent and conductive Zn0.85Mg0.15O:Al thin films prepared by pulsed laser deposition

被引：65

作者：

Gu, Xiuquan ^{[1
]}

Zhu, Liping ^{[1
]}

Ye, Zhizhen ^{[1
]}

Ma, Quanbao ^{[1
]}

He, Haiping ^{[1
]}

Zhang, Yinzhu ^{[1
]}

Zhao, Binghui ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab silicon Mat, Hangzhou 310027, Peoples R China

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2008年 / 92卷 / 03期

基金：

中国国家自然科学基金;

关键词：

thin films; optical band gap; PLD; electrical properties;

D O I：

10.1016/j.solmat.2007.09.012

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Zn1-xMgxO:Al thin films have been prepared on glass substrates by pulsed laser deposition (PLD). The effect of substrate temperature has been investigated from room temperature to 500 degrees C by analyzing the structural, optical and electrical properties. The best sample deposited at 250 degrees C shows the lowest room-temperature in resistivity of 5.16 x 10(-4) Omega cm, and optical transmittance higher than 80% in the visible region. It is observed that the optical band gap decreases from 3.92 to 3.68 eV when the substrate temperature increases from 100 to 500 degrees C. The probable mechanism is discussed. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：343 / 347

页数：5

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