Homoepitaxial Ostwald ripening

被引：22

作者：

Petersen, M

Zangwill, A

Ratsch, C ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA

[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

来源：

SURFACE SCIENCE | 2003年 / 536卷 / 1-3期

关键词：

diffusion and migration; nucleation; epitaxy; growth; computer simulations; adatoms;

D O I：

10.1016/S0039-6028(03)00580-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper reports level set simulations of the Ostwald ripening of two-dimensional homoepitaxial islands. The simulation accurately accounts for both adatom diffusion between the islands and adatom attachment/detachment processes at the island edges. We compute the time evolution of the average island size and the full island size distribution function. The results provide support for a previously proposed self-consistent mean field theory. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：55 / 60

页数：6

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