Hydrogen passivation of donors and hydrogen states in heavily doped n-type silicon

We have studied hydrogen passivation of phosphorus (P) donors and hydrogen states in heavily doped n-type silicon by electron spin resonance (ESR) of P donors and conduction electrons. A remote-treatment method of atomic hydrogen was used for the introduction of H atoms. The hydrogen passivation fraction measured in the P-doped Si samples shows strong dependence on donor concentration. The most effective substrate temperature for hydrogen passivation is between 100 and 120 degrees C. It is found from the reactivation of hydrogen-passivated P donors by isochronal annealing, that the recovery stage of P donors shifts to higher temperatures with decreasing donor concentration. These results suggest that the binding of the P-Si-H complex due partially to the Coulomb interaction decreases with increasing P concentration. Hydrogen-induced platelets are also discussed.