Nanofabrication by FIB

被引：47

作者：

Gamo, K ^{[1
]}

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 32卷 / 1-4期

关键词：

nanofabrication; FIB systems;

D O I：

10.1016/0167-9317(96)00003-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent advanced FIB systems enable one to define patterns with a dimension around 10 nm, which is required for quantum devices operating near room temperature and is of increasing importance for nanofabrication tools. Various nanofabrication techniques using focused ion beams have been Investigated including lithography, maskless ion implantation and in situ fabrication. For direct nanofabrication by FIB, generation of damage may be a problem for some applications, but previous investigations suggest that this can be minimized by using proper processing techniques.

引用

页码：159 / 171

页数：13

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