High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well

被引：172

作者：

Mayes, K ^{[1
]}

Yasan, A ^{[1
]}

McClintock, R ^{[1
]}

Shiell, D ^{[1
]}

Darvish, SR ^{[1
]}

Kung, P ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 07期

关键词：

D O I：

10.1063/1.1647273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate high-power AlGaN-based ultraviolet light-emitting diodes grown on sapphire with an emission wavelength of 280 nm using an asymmetric single-quantum-well active layer configuration on top of a high-quality AlGaN/AlN template layer. An output power of 1.8 mW at a pulsed current of 400 mA was achieved for a single 300 mumx300 mum diode. This device reached a high peak external quantum efficiency of 0.24% at 40 mA. An array of four diodes produced 6.5 mW at 880 mA of pulsed current. (C) 2004 American Institute of Physics.

引用

页码：1046 / 1048

页数：3

共 13 条

[1] Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes [J].

Casey, HC ;

Muth, J ;

Krishnankutty, S ;

Zavada, JM .

APPLIED PHYSICS LETTERS, 1996, 68 (20) :2867-2869

[2] Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm [J].

Chitnis, A ;

Pachipulusu, R ;

Mandavilli, V ;

Shatalov, M ;

Kuokstis, E ;

Zhang, JP ;

Adivarahan, V ;

Wu, S ;

Simin, G ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2002, 81 (16) :2938-2940

[3] III-nitride ultraviolet light-emitting diodes with delta doping [J].

Kim, KH ;

Li, J ;

Jin, SX ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2003, 83 (03) :566-568

[4]

Kipshidze G, 2002, PHYS STATUS SOLIDI A, V192, P286, DOI 10.1002/1521-396X(200208)192:2<286::AID-PSSA286>3.0.CO

[5]

2-2

[6] Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region [J].

Nishida, T ;

Saito, H ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 2001, 78 (25) :3927-3928

[7] 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes [J].

Yasan, A ;

McClintock, R ;

Mayes, K ;

Shiell, D ;

Gautero, L ;

Darvish, SR ;

Kung, P ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4701-4703

[8] Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes [J].

Yasan, A ;

McClintock, R ;

Mayes, K ;

Kim, DH ;

Kung, P ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2003, 83 (20) :4083-4085

[9]

Yasan A, 2002, OPTO-ELECTRON REV, V10, P287

[10] Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm [J].

Yasan, A ;

McClintock, R ;

Mayes, K ;

Darvish, SR ;

Kung, P ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2002, 81 (05) :801-802

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