Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes

被引：74

作者：

Yasan, A ^{[1
]}

McClintock, R ^{[1
]}

Mayes, K ^{[1
]}

Kim, DH ^{[1
]}

Kung, P ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 20期

关键词：

D O I：

10.1063/1.1626808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated optical properties of single quantum well AlGaN-based UV 280 nm light-emitting diodes using temperature-dependent photoluminescence (PL) measurement. We found an "S-shaped" temperature dependence of the peak energy. From the Arrhenius plot of integrated PL intensity, we speculate that dislocations as well as thermal emission of carriers out of the quantum well are responsible for the PL quenching behavior. Also a second nonradiative channel with much lower activation energy was found, the origin of which we believe to be quenching of the bound excitons. (C) 2003 American Institute of Physics.

引用

页码：4083 / 4085

页数：3

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