Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells

被引：16

作者：

Haratizadeh, H ^{[1
]}

Paskov, PP

Pozina, G

Holtz, PO

Monemar, B

Kamiyama, S

Iwaya, M

Amano, H

Akasaki, I

机构：

[1] Linkoping Univ, Dept Phys & Measurements Technol, S-58183 Linkoping, Sweden

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期

关键词：

D O I：

10.1063/1.1448144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of Si doping on exciton localization in modulation-doped GaN/Al0.07Ga0.93N multiple-quantum-well structures has been studied by means of photoluminescence (PL) and time-resolved PL measurements. Surprisingly, the PL decay time is constant in the range 320-420 ps for all doping levels at 2 K in these samples, due to a strong localization of the holes. The temperature dependence of radiative as well as nonradiative lifetime has also been evaluated between 2 K and room temperature for different Si doping. (C) 2002 American Institute of Physics.

引用

页码：1373 / 1375

页数：3

共 14 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].

Akasaki, I ;

Amano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408

[2] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[3] Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures [J].

Della Sala, F ;

Di Carlo, A ;

Lugli, P ;

Bernardini, F ;

Fiorentini, V ;

Scholz, R ;

Jancu, JM .

APPLIED PHYSICS LETTERS, 1999, 74 (14) :2002-2004

[4] Doping screening of polarization fields in nitride heterostructures [J].

Di Carlo, A ;

Della Sala, F ;

Lugli, P ;

Fiorentini, V ;

Bernardini, F .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3950-3952

[5]

Gallart M, 2000, PHYS STATUS SOLIDI A, V180, P127, DOI 10.1002/1521-396X(200007)180:1<127::AID-PSSA127>3.0.CO

[6]

2-Z

[7] Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells [J].

Lefebvre, P ;

Allégre, J ;

Gil, B ;

Mathieu, H ;

Grandjean, N ;

Leroux, M ;

Massies, J ;

Bigenwald, P .

PHYSICAL REVIEW B, 1999, 59 (23) :15363-15367

[8] Temperature quenching of photoluminescence intensities in undoped and doped GaN [J].

Leroux, M ;

Grandjean, N ;

Beaumont, B ;

Nataf, G ;

Semond, F ;

Massies, J ;

Gibart, P .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :3721-3728

[9] Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells [J].

Leroux, M ;

Grandjean, N ;

Laügt, M ;

Massies, J ;

Gil, B ;

Lefebvre, P ;

Bigenwald, P .

PHYSICAL REVIEW B, 1998, 58 (20) :13371-13374

[10] Group III-nitride based hetero and quantum structures [J].

Monemar, B ;

Pozina, G .

PROGRESS IN QUANTUM ELECTRONICS, 2000, 24 (06) :239-290

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