Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

被引：99

作者：

Yasan, A ^{[1
]}

McClintock, R ^{[1
]}

Mayes, K ^{[1
]}

Darvish, SR ^{[1
]}

Kung, P ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 05期

关键词：

D O I：

10.1063/1.1497709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate light emission at 280 nm from UV light-emitting diodes consisting of AlInGaN/AlInGaN multiple quantum wells. Turn-on voltage of the devices is similar to5 V with a differential resistance of similar to40 Omega. The peak emission wavelength redshifts similar to1 nm at high injection currents. (C) 2002 American Institute of Physics.

引用

页码：801 / 802

页数：2

共 8 条

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