Characteristics of high-quality p-type AlxGa1-xN/GaN superlattices

被引：17

作者：

Yasan, A ^{[1
]}

McClintock, R ^{[1
]}

Darvish, SR ^{[1
]}

Lin, Z ^{[1
]}

Mi, K ^{[1
]}

Kung, P ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.1463708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very-high-quality p-type AlxGa1-xN/GaN superlattices have been grown by low-pressure metalorganic vapor-phase epitaxy through optimization of Mg flow and the period of the superlattice. For the superlattice with x=26%, the hole concentration reaches a high value of 4.2x10(18) cm(-3) with a resistivity as low as 0.19 Omega cm by Hall measurement. Admittance spectroscopy was performed in order to investigate the electrical properties of the superlattices. These measurements confirm that superlattices with a larger period and higher Al composition have higher hole concentration and lower resistivity, as predicted by theory. (C) 2002 American Institute of Physics.

引用

页码：2108 / 2110

页数：3

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