Surface diffusion of Fe and island growth of FeSi2 on Si(111) surfaces

被引:16
作者
Wohllebe, A
Hollander, B
Mesters, S
Dieker, C
Crecelius, G
Michelsen, W
Mantl, S
机构
[1] Inst. fur Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich
关键词
ion scattering; molecular beam epitaxy; silicides; surface diffusion;
D O I
10.1016/S0040-6090(96)08733-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fe and Si were codeposited on Si(lll) with an understoichiometric atomic ratio of 1:3 at substrate temperatures between 580 and 720 degrees C in order to investigate the nucleation and growth of silicide precipitates under growth conditions similar to molecular beam allotaxy. Medium energy ion scattering and transmission electron microscopy were used to determine cluster sizes, phases and shapes. The surface density of clusters decreases and the average cluster size increases with increasing substrate temperature. Using Venables' theory on surface diffusion, we found an activation energy for surface diffusion of 0.76 +/- 0.10 eV for Fe on Si(111) during coevaporation. Our results show that a FeSi2 cluster containing more than three Fe atoms may be regarded as stable on the surface. Clusters of the high-temperature alpha- and of the low-temperature beta-phase were found side by side on the same samples.
引用
收藏
页码:93 / 100
页数:8
相关论文
共 25 条
[1]   SCANNING-TUNNELING-MICROSCOPY STUDIES OF NUCLEATION AND GROWTH IN A REACTIVE, EPITAXIAL SYSTEM - CO/SI(111) [J].
BENNETT, PA ;
PARIKH, SA ;
CAHILL, DG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :1680-1685
[2]   EPITAXIAL ORIENTATION OF BETA-FESI2/SI HETEROJUNCTIONS OBTAINED BY RTP CHEMICAL-VAPOR-DEPOSITION [J].
BERBEZIER, I ;
REGOLINI, JL ;
DANTERROCHES, C .
MICROSCOPY MICROANALYSIS MICROSTRUCTURES, 1993, 4 (01) :5-21
[3]   EPITAXIAL-GROWTH OF ALPHA-FESI2 ON SI(111) AT LOW-TEMPERATURE [J].
CHEVRIER, J ;
STOCKER, P ;
VINH, L ;
GAY, JM ;
DERRIEN, J .
EUROPHYSICS LETTERS, 1993, 22 (06) :449-454
[4]   REACTION OF IRON AND SILICON DURING ION-IMPLANTATION [J].
CRECELIUS, G ;
RADERMACHER, K ;
DIEKER, C .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) :4848-4851
[5]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[6]   CO DIFFUSION AND GROWTH OF BURIED SINGLE-CRYSTAL COSI2 IN SI(111) BY ENDOTAXY [J].
FATHAUER, RW ;
GEORGE, T ;
PIKE, WT .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (05) :1874-1878
[7]  
FREUNDT D, 1994, THESIS RWTH AACHEN
[8]   LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].
ISHIZAKA, A ;
SHIRAKI, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671
[9]   NEW METHOD FOR EPITAXIAL HETEROSTRUCTURE LAYER GROWTH [J].
MANTL, S ;
BAY, HL .
APPLIED PHYSICS LETTERS, 1992, 61 (03) :267-269
[10]  
Massalsky T.B., 1986, Binary Alloy Phase Diagrams, V1-3