Effects of physical treatment of ITO electrodes on the electrical properties of pentacene thin-film transistors

被引：15

作者：

Lee, Hwa Sung

Cho, Jeong Ho

Kim, Woong-Kwon

Lee, Jong-Lam

Cho, Kilwon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Polymer Res Inst, Dept Chem Engn, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Polymer Res Inst, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 08期

关键词：

D O I：

10.1149/1.2746127

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report that treating indium tin oxide (ITO) source and drain electrodes with ozone or oxygen (O-2) plasma enhances the hole injection from these electrodes to pentacene semiconductor, thereby improving the performance of pentacene thin-film transistors. Synchrotron radiation photoelectron spectroscopy results showed that the ozone and O-2 plasma treatments of the electrodes increased their work functions by about 0.4 and 1.0 eV, respectively, compared to the as-deposited ITO electrode. These increases in work function were found to lower the hole injection barrier, producing remarkable increases in the field-effect mobility.

引用

页码：H239 / H242

页数：4

共 27 条

[1]

Arora N., 1993, MOSFET MODELS VLSI C

[2] Enhancement of electron injection using reactive self-assembled monolayer in organic electronic devices [J].