Gate-planarized low-operating voltage organic field-effect transistors enabled by hot polymer pressing/embedding of conducting metal lines

A new process for fabricating patterned, gate-planarized organic field-effect transistors (OFETs) based on hot polymer pressing/embedding of conducting metal features is demonstrated. This methodology is applicable to a variety of gate conductors and polymer matrices. Vapor-deposited Al and Au and printed Ag lines as narrow as 15 μm are transferred from a substrate donor to the hot-pressed polymer, resulting in a new smooth, flat, self-planarized gate-plastic substrate composite on which thin polymer insulators can be spin-coated with great uniformity. OFETs fabricated on these structures with both p- and n-type semiconductors function at low voltages, opening new routes to printed electronic circuits and products. Copyright © 2006 American Chemical Society.