Influence of the oxygen concentration of YSZ gate dielectric layer on the low voltage operating pentacene thin film transistor

被引：12

作者：

Kim, CS ^{[1
]}

Kim, WJ

Jo, SJ

Lee, SW

Lee, SJ

Baik, HK

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Kyungsung Univ, Dept Mat Sci & Engn, Pusan 608736, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 03期

关键词：

D O I：

10.1149/1.2164568

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

report on the influence of oxygen concentration on structural and electrical properties of the amorphous yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistors (OTFTs). The films were prepared by the E-beam evaporation process. To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, X-ray diffraction, X-ray photoelectron spectroscopy, current density-electric field, current-voltage were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate. (c) 2006 The Electrochemical Society.

引用

页码：G96 / G99

页数：4

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