Low frequency noise in degenerate semiconductors

We present a model of low frequency noise for degenerate semiconductors. The model links the 1/f noise to tail states near the band edges with a capture cross section that is strongly energy dependent. It predicts that the low frequency noise is not very sensitive to a particular shape of the density of the tail states and that, in degenerate semiconductors, the level of noise should decrease with an increase in the degree of degeneracy. The model also explains the dependence of the noise level on the band-to-band illumination, in qualitative agreement with experimental data. (C) 2001 American Institute of Physics.